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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CDCE421RGET датащи(PDF) 13 Page - Texas Instruments |
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CDCE421RGET датащи(HTML) 13 Page - Texas Instruments |
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13 / 24 page  ELECTRICAL CHARACTERISTICS CDCE421 www.ti.com..................................................................................................................................................... SCAS842B – APRIL 2007 – REVISED JANUARY 2009 Using the recommended operating conditions for the CDCE421 device. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCC Supply voltage 3 3.3 3.6 V IVCC(LVDS) Total current LVDS mode 83 103 mA IVCC(LVPECL) Total current LVPECL mode 91 110 mA LVDS OUTPUT MODE (see Figure 8) fCLK Output frequency 10.9 400 MHz |VOD| LDVS differential output voltage RL = 100 Ω 247 454 mV ΔVOD LVDS VOD magnitude change 50 mV VOS Offset voltage –40°C to 85°C 1.1 1.3 V ΔVOS VOS magnitude change 50 mV tr Output rise time 20% to 80% of VOUTpp 230 ps tf Output fall time 80% to 20% of VOUTpp 230 ps Short Vout+ to ground –30 mA IOS Short-circuit output current Short Vout– to ground 30 mA Duty cycle of the output waveform 45% 55% TJ Random jitter 10kHz to 20MHz 1 ps, rms LVPECL OUTPUT MODE (see Figure 9) fCLK Output frequency 10.9 1175 MHz VOH LVPECL high-level output voltage VCC – 1.2 VCC – 0.81 V VOL LVPECL low-level output voltage VCC – 2.17 VCC – 1.36 V |VOD| LVPECL differential output voltage 407 mV tr Output rise time 20% to 80% of VOUTpp 230 ps tf Output fall time 80% to 20% of VOUTpp 230 ps Duty cycle of the output waveform 45% 55% TJ Random jitter 10kHz to 20MHz 1 ps, rms LVCMOS INPUT VIL,CMOS Low-level CMOS input voltage VCC = 3.3 V 0.3 VCC V VIH,CMOS High-level CMOS input voltage VCC = 3.3 V 0.7 VCC V IL,CMOS Low- level CMOS input current VCC = VCC max, VIL = 0 V –200 µA IH,CMOS High-level CMOS input current VCC = VCC min, VIH = 3.7 V 200 µA Copyright © 2007–2009, Texas Instruments Incorporated Submit Documentation Feedback 13 Product Folder Link(s): CDCE421 |
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