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DP83256 датащи(PDF) 112 Page - National Semiconductor (TI) |
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DP83256 датащи(HTML) 112 Page - National Semiconductor (TI) |
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112 / 144 page ![]() 70 Electrical Characteristics (Continued) DC Electrical Characteristics for All FDDI Clock Outputs The following signals are covered Local Byte Clocks (LBC1 – LBC5) and Local Symbol Clock (LSC) These outputs are designed to drive capacitive loads from 20 pF to 60 pF Symbol Parameter Conditions Min Typ Max Units VOH Output High Voltage IOH eb400 mAVCC b 2V VOL Output Low Voltage IOL e 8 mA 05 V DC Electrical Characteristics for All Clock Reference Inputs The following signals are covered Reference In (REF IN) and Feedback In (FBK IN) Symbol Parameter Conditions Min Typ Max Units VIH Input High Voltage 20 V VIL Input Low Voltage 08 V VIC Input Clamp Voltage IIN eb18 mA b 15 V IIL Input Low Current VIN e GND b 10 m A IIH Input High Current VIN e VCC a 10 m A DC Electrical Characteristics for Crystal Inputs and Outputs The following signals are covered Crystal In (XTAL IN) and Crystal Out (XTAL OUT) Symbol Parameter Conditions Min Typ Max Units IOL Output Low Current VOUT e 1V 4 mA (Note A) IOH Output High Current VOUT e VCC b 1V b 4mA (Note A) Small Signal Gain XTAL IN e 100 mV 45 Centered about VTH (Note A) VTH Input Threshold (Note A) 22 V Voltage XTAL IN to (Note A) 70 ns XTAL OUT Delay Output Impedance (Note A) 270 X Internal Resistor (Note A) 10 kX Variation Note A This parameter is presented as a typical value to provide enough information to design an appropriate crystal network DC Electrical Characteristics for All Open Drain Outputs The following signals are covered Interrupt (EINT) Acknowledge (EACK) and Cascade Ready (CR) Symbol Parameter Conditions Min Typ Max Units VOL Output Low Voltage IOL e 8 mA 05 V IOZ TRI-STATE Leakage VOUT e VCC 10 m A 112 |
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