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COP884CF датащи(PDF) 9 Page - National Semiconductor (TI) |
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COP884CF датащи(HTML) 9 Page - National Semiconductor (TI) |
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9 / 44 page ![]() DC Electrical Characteristics 888CF: (Continued) −40˚C ≤ T A ≤ +85˚C unless otherwise specified Parameter Conditions Min Typ Max Units RAM Retention Voltage, V r 500 ns Rise 2 V and Fall Time (Min) Input Capacitance 7pF Load Capacitance on D2 1000 pF Note 11: Rate of voltage change must be less then 0.5 V/ms. Note 12: Supply current is measured after running 2000 cycles with a square wave CKI input, CKO open, inputs at rails and outputs open. Note 13: The HALT mode will stop CKI from oscillating in the RC and the Crystal configurations. Test conditions: All inputs tied to VCC, L and G0–G5 configured as outputs and set high. The D port set to zero. The A/D is disabled. VREF is tied to AGND (effectively shorting the Reference resistor). The clock monitor is disabled. www.national.com 9 |
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