| поискавой системы для электроныых деталей |
|
PUSB3FR4 датащи(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
PUSB3FR4 датащи(HTML) 3 Page - NXP Semiconductors |
|
3 / 15 page ![]() PUSB3FR4 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 — 26 January 2015 3 of 15 NXP Semiconductors PUSB3FR4 ESD protection for ultra high-speed interfaces 6. Characteristics [1] This parameter is guaranteed by design. [2] According to IEC 61000-4-5 (8/20 s current waveform). [3] 100 ns Transmission Line Pulse (TLP); 50 ; pulser at 80 ns. Table 5. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBR breakdown voltage II =1 mA 5.5 9 - V ILR reverse leakage current per channel; VI =5V - <1 100 nA VF forward voltage II = 1 mA -0.7 -V Cline line capacitance f = 1 MHz; VI =1.5 V [1] - 0.29 0.34 pF C line line capacitance difference f=1MHz; VI =1.5 V [1] - 0.02 0.05 pF rdyn dynamic resistance TLP [3] positive transient - 0.27 - negative transient - 0.27 - Vsbck snapback voltage II = 1 A; TLP 100/10 ns - 1.5 - V VCL clamping voltage IPP = 5 A; positive transient [2] -3 -V IPP = 5A; negative transient [2] - 3- V |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |