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RF2483 датащи(PDF) 28 Page - RF Micro Devices

номер детали RF2483
подробное описание детали  LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC
PDF  34 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2483 датащи(HTML) 28 Page - RF Micro Devices

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RF2483
DS110505
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Typical Performance: 2400MHz Application Circuit
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-80
-70
-60
-50
-40
-30
-20
-10
0
10
2200
2250
2300
2350
2400
2450
2500
2550
2600
Frequency (MHz)
High Band Modulator Performance versus Frequency
LO=3dBm, V
CC=2.7V, GC=2V, IQ=100kHz 800mVP-P
Output Power
Carrier Suppression
Sideband Suppression
3rd Harmonic of Modulation
-70
-60
-50
-40
-30
-20
-10
0
10
-70
-60
-50
-40
-30
-20
-10
0
10
-10
-8
-6
-4
-2
0
2468
LO Power (dBm)
High Band Modulator Performance versus LO Power
LO=2400MHz, V
CC=2.7V, GC=2V, IQ=100kHz 800mVP-P
Output Power
Carrier Suppression
Sideband Suppression
3rd Hrmonic of Modulation
-40
-35
-30
-25
-20
-15
-10
-5
0
5
0
0.5
1
1.5
2
2.5
Gain Control (V)
High Band Output Power versus Gain Control
LO=2400MHz 3dBm, IQ=100kHz 800mV
P-P 1.2VDC
Vcc=2.7V
Vcc=3.3V
-40
-35
-30
-25
-20
-15
-10
-5
0
5
0
0.5
1
1.5
2
2.5
Gain Control (V)
High Band Output Power versus Gain Control
LO=2400MHz 3dBm, IQ=100kHz 800mV
P-P 1.2VDC
Temp = +25 °C, Vcc=2.7V
Temp = -40°C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-40
-35
-30
-25
-20
-15
-10
-5
0
5
0
0.5
1
1.5
2
2.5
Gain Control (V)
High Band Output Power versus Gain Control
V
CC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC
2200MHz
2300MHz
2400MHz
2500MHz
2600MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
Gain Control (V)
High Band Carrier Suppression versus Gain Control
V
CC=2.7V, LO=3dBm, IQ=100kHz 800mVP-P 1.2VDC
2200MHz
2300MHz
2400MHz
2500MHz
2600MHz



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