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RF2483 датащи(PDF) 22 Page - RF Micro Devices

номер детали RF2483
подробное описание детали  LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC
PDF  34 Pages
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производитель  RFMD [RF Micro Devices]
домашняя страница  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2483 датащи(HTML) 22 Page - RF Micro Devices

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RF2483
DS110505
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Typical Performance: 1700MHz to 2200MHz Application Circuit
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
5.00
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Output Power versus Gain Control
LO=1900MHz 0dBm, IQ=100kHz 800mV
P-P 1.2VDC
Vcc = 2.7V
Vcc = 3.0V
Vcc = 3.3V
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Output Power versus Gain Control
LO=1900MHz 0dBm, IQ=100kHz 800mV
P-P 1.2VDC
Temp = -40°C, Vcc=2.7V
Temp = +25 °C, Vcc=2.7V
Temp = +85 °C, Vcc=2.7V
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Output Power versus Gain Control
V
CC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
1700MHz
1800MHz
1900MHz
2000MHz
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Carrier Suppression versus Gain Control
V
CC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
1700MHz
1800MHz
1900MHz
2000MHz
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Sideband Suppression versus Gain Control
V
CC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
1700MHz
1800MHz
1900MHz
2000MHz
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Gain Control (V)
High Band Modulation's 3rd Harmonic versus Gain Control
V
CC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
1700MHz
1800MHz
1900MHz
2000MHz



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