8

Specifications ispGDX80VA

Input Voltage Applied ............................... -0.5 to +5.6V

Off-State Output Voltage Applied ............ -0.5 to +5.6V

Storage Temperature ................................ -65 to 150

°C

Case Temp. with Power Applied .............. -55 to 125

°C

1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation of the device at these or at any other conditions above those indicated in the operational sections of this specification

is not implied (while programming, follow the programming specifications).

2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.

DC Recommended Operating Conditions

C

SYMBOL

Table 2-0006/gdxva

C

PARAMETER

PACKAGE TYPE

Dedicated Clock Capacitance

8

UNITS

TYPICAL

TEST CONDITIONS

1

2

7

TQFP

TQFP

I/O Capacitance

pf

pf

V = 3.3V, V = 2.0V

V = 3.3V, V

= 2.0V

CC

CC

Y

I/O

Capacitance (T

PARAMETER

MINIMUM

MAXIMUM

UNITS

Erase/Reprogram Cycles

10,000

—

Cycles

Erase/Reprogram Specifications

SYMBOL

Table 2-0005/gdxva

PARAMETER

Supply Voltage

I/O Reference Voltage

Commercial

MIN.

MAX.

UNITS

3.00

2.3

3.60

3.60

V

Industrial

3.00

3.60

V

V