AN4544 datasheet(28/35 Pages) STMICROELECTRONICS

28 / 35 page

Datasheet explanation

AN4544

28/35

DocID026535 Rev 1

Eon is the amount of total energy lost during turn-on under inductive load, and it includes the

loss from the diode reverse recovery. It is measured from the point where the collector

current begins to flow (10% IC) to the point where the collector-emitter voltage reaches 10%

of VCE.

Eoff is the amount of total energy lost during turn-off under inductive load. It is measured

from the point where the collector-emitter voltage begins to rise (measures starts from 10%

VCE) to the point where the collector current falls to zero.

Eon, Eoff are specified at T= 25 °C and 175 °C, IC @ T= 100 °C, VGE= 15 V, for VCC= 400 V

(for 600 V / 650 V devices) and under inductive load conditions. Data for T=175 °C are

provided to the user because the temperature of the devices in the system rises during

operation. Switching energy rises due to increase of IC (collector current), RG (gate

resistance), T (case/junction temperature) and VCE (bus voltage). Figure 25 and Figure 26

show detailed changes of switching energy in relation to changes of IC, RG, T and VCE.

These data are not absolute values, but they are included in the datasheet as a reference

for design purposes.

Figure 25. Switching losses vs. collector

current

Figure 26. Switching losses vs. gate resistance

E(μJ)

IC(A)

800

400

1200

VCC=400V, VGE=15V

Rg=10Ω, Tj=175°C

1600

2000

2400

2800

Eon

Eoff

AM17399v1

E(μJ)

Rg(Ω)

700

300

1100

VCC=400V, VGE=15V

IC=40A, Tj=175°C

1500

1900

2300

Eon

Eoff

AM17400v1

AN4544 датащи(PDF) 28 Page - STMicroelectronics

AN4544 датащи(HTML) 28 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

датащи скачать

ссылки URL