AN4544 datasheet(14/35 Pages) STMICROELECTRONICS

14 / 35 page

Datasheet explanation

AN4544

14/35

DocID026535 Rev 1

goes above the linear region, the result is a significant collector-emitter voltage rise and

consequent rise of conduction loss and possible device destruction.

•

Preventing burnout or latchup. Although the pulse width is theoretically too short to

overheat the die, exceeding the ICP ratings can cause burnout or latchup.

•

Preventing the die overheats. The note 1 implies that ICP is based on a thermal

limitation depending on the pulse width. This is always true for two reasons:

–

There is some margin in the ICP ratings

–

Whatever the failure mechanism is, overheating is the observed end result

•

Avoid excessive current through the bond wires

Figure 10. IGBT transfer characteristics

Regarding ICP thermal limitation, the temperature rise depends on the pulse width, time

among pulses, heat dissipation, and VCE(sat) as well as the shape and magnitude of the

current pulse. Remaining within ICP limits does not assure that the maximum junction

temperature is not exceeded.

2.4.5

Gate-to-emitter voltage (VGE)

VGE stands for the allowable range voltage between the gate and emitter terminals.

Exceeding VGE range may result in permanent device degradation due to oxide breakdown

and dielectric rupture. Remaining within these ratings assures application reliability. This

value, with reasonable guard band, is 100% tested and warranted.

Table 4. VGE information showed in maximum ratings

Symbol

Parameter

Value

Unit

VGE

Gate-emitter voltage

±20

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