AN4544 datasheet(25/35 Pages) STMICROELECTRONICS

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AN4544

Datasheet explanation

2.7

IGBT switching characteristics (inductive load)

This section describes the behavior of the device during the two transitional states: from off-

state to on-state and from on-state to off-state. IGBT and Power MOSFET switching

characteristics are very similar. The major difference from Power MOSFET is that it has a

tailing collector current due to the stored charge in the N-drift region.

The switching characteristic provides useful information to determine an appropriate dead

time between turn-on and turn-off of the complementary devices in a half-bridge

configuration.

Table 10. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 40 A,

RG = 10 Ω, VGE = 15 V

-52

Current rise time

(di/dt)on

Turn-on current slope

1850

A/µs

td(off)

Turn-off delay time

208

Current fall time

Eon

Turn-on switching losses

456

µJ

Eoff

Turn-off switching losses

411

µJ

Ets

Total switching losses

867

µJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 40 A,

RG = 10 Ω, VGE = 15 V,

TJ = 175 °C

-52

Current rise time

(di/dt)on

Turn-on current slope

1538

A/µs

td(off)

Turn-off delay time

220

Current fall time

Eon

Turn-on switching losses

1330

µJ

Eoff

Turn-off switching losses

560

µJ

Ets

Total switching losses

1890

µJ

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