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AN2785 датащи(PDF) 37 Page - STMicroelectronics

номер детали AN2785
подробное описание детали  L6393 half bridge gate driver
PDF  51 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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AN2785 датащи(HTML) 37 Page - STMicroelectronics

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AN2785
Below-ground voltage on the OUT pin
Doc ID 14785 Rev 1
37/51
The overall below-ground voltage on the OUT pin can be calculated as follows.
Equation 5
Equation 6
Where:
VFPK is the free-wheeling diode transient peak forward voltage; it depends mainly on
the device technology and on the dIF / dt of the current in the diode. Typical values may
range from some volts to more than 10 V. Figure 28 shows the VFP vs. dIF/dt of the
STTH1L06 diode.
dIF / dt is the current slope in the low side IGBT/MOSFET and may have a value from
some tens to some hundreds of A/µs. Its value depends mainly on the power switch
characteristics and in part on the driving current.
LPARASITIC represents the sum of all parasitic inductances on the current path and
mainly depends on the PCB layout. In general, during the design of the power
application it is important to pay attention to the layout of the power bridges in order to
limit this parameter. Typical values of a good layout are in the order of some tens of nH.
Note that it is also useful to use RSENSE resistors with low parasitic inductance for the
same reason.
RSENSE * ILOAD product is the value of the VSENSE voltage and is typically less than 1 V,
also for thermal dissipation issues on the same resistor.
VF is the forward voltage of the free-wheeling diode and is usually less than 2 V.
Figure 28.
Transient peak forward voltage vs. dIF/dt of STTH1L06 diode
V
OUTmin
static
R
SENSE
I
LOAD
V
F
+
()
=
4
43
4
42
1
4
4
4
43
4
4
4
42
1
on
contributi
static
static
min_
OUT
on
contributi
dynamic
F
PARASITIC
FPK
spike
_
BGV
V
dt
dI
L
V
V
+
+
=



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