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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AN2785 датащи(PDF) 35 Page - STMicroelectronics |
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AN2785 датащи(HTML) 35 Page - STMicroelectronics |
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35 / 51 page  AN2785 How to increase the gate driver output current capability Doc ID 14785 Rev 1 35/51 Figure 26. Example of a gate driving circuit with current buffers to increase current capability In the example above, the ST devices STS01DTP06 are dual NPN-PNP complementary bipolar transistors rated for 1 A current and available in the small SO-8 package. The two push-pull structures are placed on each gate driving path and must be provided with a decoupling capacitor very close to the device pins (as shown in Figure 26). HVG H.V. TO LOAD OUT LVG VBOOT GND VCC 100 nF 25V 10 uF 25V + 15V + - 100 nF 25V 100 uF 400V + VCC 100 nF 25V STS01DTP06 100 nF 25V STS01DTP06 Very close to push-pull stage Very close to push-pull stage GATE DRIVER 0-10 Ω 0.25W 0-10 Ω 0.25W 0-10 Ω 0.25W 0-10 Ω 0.25W |
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