| поискавой системы для электроныых деталей |
|
AN2644 датащи(PDF) 41 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN2644 датащи(HTML) 41 Page - STMicroelectronics |
|
41 / 64 page ![]() AN2644 The LLC resonant half-bridge converter 41/64 This phenomenon is well-known in push-pull and half-bridge topologies and is sometimes referred to as "flux doubling" because the transformer's magnetic flux excursion, which normally swings by 2Bpk from -Bpk to +Bpk under steady state operation, in the first cycle goes from 0 to 2Bpk. Fortunately, if the integrated magnetics approach is used, there will be no risk of saturation. Flux doubling will concern only the resonant inductor Ls, which is mostly associated to the transformer's leakage inductance that, by definition, cannot saturate because the relevant flux is developed in air. Although not inherently hazardous, (capacitive mode and ZVS loss will typically occur in the first two-three cycles, then the associated stress level is practically negligible) this phenomenon is not nice to see. To eliminate or, at least, minimize it, the split capacitor configuration of Figure 4 can be used in some cases. In fact, the initial voltage across each capacitor will be close to Vin/2 (equal to Vin/2 if the two capacitors had exactly the same value), then there will be only a minimum transient. However, this is ineffective with many control ICs with high-side MOSFET driving capability using capacitive bootstrap. To guarantee an adequate precharge of the bootstrap capacitor to correctly drive the high-side MOSFET Q1 since the first cycle, the low-side MOSFET Q2 is turned on for some time before starting to operate (as shown in Figure 26), which discharges completely the lower Cr/2 capacitor. This bootstrap precharge mechanism, shown in Figure 27, makes ineffective also any pull-up that could precharge Cr. In this case the initial current peak cannot be completely eliminated, just reduced by either using a higher starting frequency or by forcing the duty cycle to start from a value considerably smaller than 50% and letting it widen progressively. Figure 27. High-side driving with bootstrap approach and bootstrap capacitor charge path 2.7 Analysis of power losses Conduction power losses on the primary side are located in the power MOSFETs, in the resonant capacitor Cr and the transformer (for convenience the secondary winding losses can be incorporated). On the secondary side, losses will be essentially located in the secondary rectifiers, although those in the output capacitors cannot be neglected, at least as far as capacitor selection is concerned. Vin Vcc DBOOT CBOOT Cr / 2 Ls Lp Q1 Q2 a:1:1 Cr / 2 Vcc Level Shifter Control Logic IBOOTCHARGE Vin Vcc DBOOT DBOOT CBOOT CBOOT Cr / 2 Ls Lp Q1 Q2 a:1:1 Cr / 2 Vcc Level Shifter Control Logic IBOOTCHARGE IBOOTCHARGE |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |