NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

8 / 15

0

2.5

2.0

1.0

1.5

0.5

017aaa618

10

20

30

(A)

0

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

017aaa619

1.0

1.4

1.8

a

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

017aaa620

0.5

1.0

1.5

(V)

0

max

typ

min

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

10

1

017aaa621

C

(pF)

10

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values