NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

7 / 15

0

4

3

1

2

017aaa614

10

20

30

(A)

0

4.5 V

2.5 V

2.25 V

1.75 V

1.5 V

1.25 V

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa615

0

1.5

1.0

0.5

(A)

min

typ

max

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

017aaa616

0

30

20

10

0.02

0.03

0.01

0.04

0.05

(Ω)

0

1.4 V 1.5 V

1.8 V

2.5 V

4.5 V

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

0

5

4

2

3

1

017aaa617

0.04

0.06

0.02

0.08

0.10

(Ω)

0

(1)

(2)

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values