NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

5 / 15

017aaa542

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa543

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

20

-

-

V

gate-source threshold

voltage

0.4

0.7

1

V

-

-

1

µA

drain leakage current

-

-

100

µA