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HM5259165B датащи(PDF) 41 Page - Elpida Memory

номер детали HM5259165B
подробное описание детали  512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 횞 16-bit 횞 4-bank/16-Mword 횞 8-bit 횞 4-bank /32-Mword 횞 4-bit 횞 4-bank PC/133, PC/100 SDRAM
PDF  63 Pages
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производитель  ELPIDA [Elpida Memory]
домашняя страница  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

HM5259165B датащи(HTML) 41 Page - Elpida Memory

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HM5259165B/HM5259805B/HM5259405B-75/A6
Data Sheet E0118H10
41
VCC, VCCQ
Power up sequence
Initialization sequence
100
µs
0 V
Low
Low
Low
CKE, DQM,
DQMU/DQML
CLK
CS, DQ
200
µs
Power stabilize
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to V
SS
V
T
–0.5 to V
CC + 0.5
(
≤ 4.6 (max))
V1
Supply voltage relative to V
SS
V
CC
–0.5 to +4.6
V
1
Short circuit output current
Iout
50
mA
Power dissipation
P
T
1.2
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Note:
1. Respect to V
SS.
DC Operating Conditions (Ta = 0 to +70˚C)
Parameter
Symbol
Min
Max
Unit
Notes
Supply voltage
V
CC, VCCQ
3.0
3.6
V
1, 2
V
SS, VSSQ0
0
V
3
Input high voltage
V
IH
2.0
V
CC + 0.3
V
1, 4
Input low voltage
V
IL
–0.3
0.8
V
1, 5
Notes: 1. All voltage referred to V
SS.
2. The supply voltage with all VCC and V
CCQ pins must be on the same level.
3. The supply voltage with all VSS and V
SSQ pins must be on the same level.
4. V
IH (max) = VCC + 2.0 V for pulse width
≤ 3 ns at V
CC.
5. V
IL (min) = VSS – 2.0 V for pulse width
≤ 3 ns at V
SS.



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