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HM5259165B датащи(PDF) 32 Page - Elpida Memory |
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HM5259165B датащи(HTML) 32 Page - Elpida Memory |
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32 / 63 page ![]() HM5259165B/HM5259805B/HM5259405B-75/A6 Data Sheet E0118H10 32 Read with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. The internal auto-precharge of one bank starts at the next clock of the second command. Read with Auto Precharge to Write Command Interval (Different bank) CLK Command BS Dout Din CL = 2 CL = 3 READ A WRIT in B0 in B1 in B2 in B3 Burst Length = 4 bank0 Read A bank3 Write Note: Internal auto-precharge starts at the timing indicated by " ". DQM, DQMU/DQML High-Z 2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. |
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