HM5259165B datasheet(56/63 Pages) ELPIDA

номер детали	HM5259165B

подробное описание детали	512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 횞 16-bit 횞 4-bank/16-Mword 횞 8-bit 횞 4-bank /32-Mword 횞 4-bit 횞 4-bank PC/133, PC/100 SDRAM

PDF	63 Pages

Scroll/Zoom	100%

производитель	ELPIDA [Elpida Memory]

домашняя страница	http://www.elpida.com/en

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56 / 63 page

HM5259165B/HM5259805B/HM5259405B-75/A6

Data Sheet E0118H10

Mode Register Set Cycle

CLK

CKE

RAS

CAS

Address

DQM,

DQMU/DQML

DQ (input)

DQ (output)

High-Z

b+3

b’

b’+1

b’+2

b’+3

valid

C: b’

RSA

code

l RCD

l RP

Precharge

If needed

Mode

Set

Bank 3

Active

Bank 3

Read

R: b

C: b

Output mask

VIH

= 3

CAS latency = 3

Burst length = 4

= V

or V

RCD

Read Cycle/Write Cycle

1011

121314

151617

181920

R:a

C:a

R:b

C:b

C:b'

C:b"

a+1 a+2 a+3

b+1 b+2 b+3 b'

b'+1 b"

b"+1 b"+2 b"+3

CKE

RAS

CAS

Address

DQM,

DQMU/DQML

DQ (output)

DQ (input)

CLK

R:a

C:a

R:b

C:b

C:b'

C:b"

a+1 a+2 a+3

b+1 b+2 b+3 b'

b'+1 b"

b"+1 b"+2 b"+3

Bank 0

Active

Bank 0

Read

Bank 3

Active

Bank 3

Read

Bank 3

Read

Bank 3

Read

Bank 0

Precharge

Bank 3

Precharge

Bank 0

Active

Bank 0

Write

Bank 3

Active

Bank 3

Write

Bank 3

Write

Bank 3

Write

Bank 0

Precharge

Bank 3

Precharge

CKE

RAS

CAS

Address

DQM,

DQMU/DQML

DQ (input)

DQ (output)

High-Z

VIH

Read cycle

RAS-CAS delay = 3

CAS latency = 3

Burst length = 4

= V

or V

Write cycle

RAS-CAS delay = 3

CAS latency = 3

Burst length = 4

= V

or V

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