CSD19535KCS datasheet(1/10 Pages) TI1

номер детали	CSD19535KCS

подробное описание детали	CSD19535KCS, 100 V N-Channel NexFET Power MOSFET

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производитель	TI1 [Texas Instruments]

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 100A

TC = 125°C,I D = 100A

G001

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Qg - Gate Charge (nC)

ID = 100A

VDS = 50V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

CSD19535KCS

www.ti.com

SLPS484 – JANUARY 2014

CSD19535KCS, 100 V N-Channel NexFET™ Power MOSFET

Check for Samples: CSD19535KCS

1

FEATURES

2

•

Ultra-Low Qg and Qgd

PRODUCT SUMMARY

•

Low Thermal Resistance

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

•

Avalanche Rated

Qg

Gate Charge Total (10 V)

78

nC

•

Pb-Free Terminal Plating

Qgd

Gate Charge Gate to Drain

13

nC

•

RoHS Compliant

VGS = 6 V

3.4

m

Ω

RDS(on)

Drain-to-Source On Resistance

•

Halogen Free

VGS = 10 V

3.1

m

Ω

•

TO-220 Plastic Package

VGS(th)

Threshold Voltage

2.7

V

APPLICATIONS

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

•

Secondary Side Synchronous Rectifier

TO-220 Plastic

•

Motor Control

CSD19535KCS

Tube

50

Tube

Package

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

This 100 V, 3.1 m

Ω, TO-220 NexFET™ power

TA = 25°C

VALUE

UNIT

MOSFET is designed to minimize losses in power

VDS

Drain-to-Source Voltage

100

V

conversion applications.

VGS

Gate-to-Source Voltage

±20

V

Continuous Drain Current (Package limited)

150

Pin Out Drawing

Continuous Drain Current (Silicon limited),

187

ID

TC = 25°C

A

Continuous Drain Current (Silicon limited),

133

TC = 100°C

IDM

Pulsed Drain Current (1)

181

A

PD

Power Dissipation

300

W

TJ,

Operating Junction and Storage

–55 to 175

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

451

mJ

ID = 95 A, L = 0.1 mH, RG = 25 Ω

(1) Pulse duration

≤ 300 μs, Duty cycle ≤ 1%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Аналогичный номер детали - CSD19535KCS

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	CSD19535KCS	321Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD19535KCS	1,003Kb / 13P	CSD19535KCS 100V N-Channel NexFET™ Power MOSFET REVISED MAY 2024
Texas Instruments	CSD19535KCS.B	1,003Kb / 13P	CSD19535KCS 100V N-Channel NexFET™ Power MOSFET REVISED MAY 2024

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Аналогичное описание - CSD19535KCS

производитель	номер детали	датащи	подробное описание детали
Texas Instruments	CSD19532Q5B	1Mb / 13P	100 V N-Channel NexFET Power MOSFET
	CSD19532Q5B	1Mb / 13P	100 V N-Channel NexFET??Power MOSFET
	CSD19533Q5A	1Mb / 13P	100 V N-Channel NexFET Power MOSFETs
	CSD19533KCS	768Kb / 10P	100 V N-Channel NexFET Power MOSFETs
	CSD19536KCS	467Kb / 10P	CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
	CSD19534KCS	300Kb / 12P	CSD19534KCS 100 V N-Channel NexFET Power MOSFET
	CSD19536KTT	852Kb / 14P	CSD19536KTT 100 V N-Channel NexFET Power MOSFET
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	CSD19538Q3A	348Kb / 13P	100 V N-Channel NexFET Power MOSFET
	CSD18511KTT	377Kb / 11P	40-V N-Channel NexFET Power MOSFET

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