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CSD19535KCS датащи(PDF) 5 Page - Texas Instruments

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номер детали CSD19535KCS
подробное описание детали  CSD19535KCS, 100 V N-Channel NexFET Power MOSFET
PDF  10 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD19535KCS датащи(HTML) 5 Page - Texas Instruments

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0
25
50
75
100
125
150
175
−50
−25
0
25
50
75
100
125
150
175
200
TC - Case Temperature (ºC)
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 0.5ºC/W
G001
10
100
1000
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
CSD19535KCS
www.ti.com
SLPS484 – JANUARY 2014
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs Temperature
Copyright © 2014, Texas Instruments Incorporated
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