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CSD19535KCS датащи(PDF) 4 Page - Texas Instruments

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номер детали CSD19535KCS
подробное описание детали  CSD19535KCS, 100 V N-Channel NexFET Power MOSFET
PDF  10 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD19535KCS датащи(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID = 100A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
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−75 −50 −25
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TC - Case Temperature (ºC)
ID = 250uA
G001
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
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Qg - Gate Charge (nC)
ID = 100A
VDS = 50V
G001
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19535KCS
SLPS484 – JANUARY 2014
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD19535KCS



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