CSD19535KCS datasheet(2/10 Pages) TI1

2 / 10 page

CSD19535KCS

SLPS484 – JANUARY 2014

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

100

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 80 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

2.2

2.7

3.4

VGS = 6 V, ID = 100 A

3.4

4.4

Ω

RDS(on)

Drain-to-Source On Resistance

VGS = 10 V, ID = 100 A

3.1

3.6

Ω

gfs

Transconductance

VDS = 10 V, ID = 100 A

274

Dynamic Characteristics

Ciss

Input Capacitance

6100

7930

Coss

Output Capacitance

VGS = 0 V, VDS = 50 V, f = 1 MHz

1160

1500

Crss

Reverse Transfer Capacitance

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (10 V)

101

Qgd

Gate Charge Gate to Drain

VDS = 50 V, ID = 100 A

Qgs

Gate Charge Gate to Source

Qg(th)

Gate Charge at Vth

Qoss

Output Charge

VDS = 40 V, VGS = 0 V

196

td(on)

Turn On Delay Time

Rise Time

VDS = 50 V, VGS = 10 V,

IDS = 100 A, RG = 0 Ω

td(off)

Turn Off Delay Time

Fall Time

Diode Characteristics

VSD

Diode Forward Voltage

ISD = 100 A, VGS = 0 V

0.9

1.1

Qrr

Reverse Recovery Charge

421

VDS= 50 V, IF = 100 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Thermal Resistance Junction to Case

0.5

°C/W

RθJA

Thermal Resistance Junction to Ambient

°C/W

Submit Documentation Feedback

Product Folder Links: CSD19535KCS

CSD19535KCS датащи(PDF) 2 Page - Texas Instruments

CSD19535KCS датащи(HTML) 2 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10

датащи скачать

ссылки URL