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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC12F635ESS датащи(PDF) 192 Page - Microchip Technology |
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PIC12F635ESS датащи(HTML) 192 Page - Microchip Technology |
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192 / 234 page  PIC12F635/PIC16F636/639 DS41232D-page 190 © 2007 Microchip Technology Inc. 15.12 SPI Timing: Analog Front-End (AFE) for PIC16F639 AC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Supply Voltage 2.0V ≤ VDD ≤ 3.6V Operating temperature -40°C ≤ TAMB ≤ +85°C for industrial LC Signal Input Sinusoidal 300 mVPP Carrier Frequency 125 kHz LCCOM connected to VSS Param Sym Characteristic Min Typ† Max Units Conditions AF33 FSCLK SCLK Frequency — — 3 MHz AF34 Tcssc CS fall to first SCLK edge setup time 100 — — ns AF35 TSU SDI setup time 30 — — ns AF36 THD SDI hold time 50 — — ns AF37 THI SCLK high time 150 — — ns AF38 TLO SCLK low time 150 — — ns AF39 TDO SDO setup time — — 150 ns AF40 TSCCS SCLK last edge to CS rise setup time 100 — — ns AF41 TCSH CS high time 500 — — ns AF42 TCS1CS rise to SCLK edge setup time 50 — — ns AF43 TCS0 SCLK edge to CS fall setup time 50 — — ns SCLK edge when CS is high AF44 TSPIR Rise time of SPI data (SPI Read command) —10 — ns VDD = 3.0V. Time is measured from 10% to 90% of amplitude AF45 TSPIF Fall time of SPI data (SPI Read command) —10 — ns VDD = 3.0V. Time is measured from 90% to 10% of amplitude * Parameter is characterized but not tested. † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. |
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