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PIC12F635ESS датащи(PDF) 168 Page - Microchip Technology |
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PIC12F635ESS датащи(HTML) 168 Page - Microchip Technology |
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168 / 234 page ![]() PIC12F635/PIC16F636/639 DS41232D-page 166 © 2007 Microchip Technology Inc. 15.1 DC Characteristics: PIC12F635/PIC16F636-I (Industrial) PIC12F635/PIC16F636-E (Extended) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Sym Characteristic Min Typ† Max Units Conditions D001 D001A D001B D001C VDD Supply Voltage 2.0 2.0 3.0 4.5 — — — — 5.5 5.5 5.5 5.5 V V V V FOSC < = 4 MHz FOSC < = 8 MHz, HFINTOSC, EC FOSC < = 10 MHz FOSC < = 20 MHz D002 VDR RAM Data Retention Voltage(1) 1.5* — — V Device in Sleep mode D003 VPOR VDD Start Voltage to ensure internal Power-on Reset signal —VSS —V See Section 12.3 “Power-on Reset” for details. D004 SVDD VDD Rise Rate to ensure internal Power-on Reset signal 0.05* — — V/ms See Section 12.3 “Power-on Reset” for details. D005 VBOD Brown-out Reset 2.0 2.1 2.2 V * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data. |
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