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LPC810M021FN8 датащи(PDF) 45 Page - NXP Semiconductors |
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LPC810M021FN8 датащи(HTML) 45 Page - NXP Semiconductors |
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45 / 71 page ![]() LPC81xM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 29 July 2013 45 of 71 NXP Semiconductors LPC81xM 32-bit ARM Cortex-M0+ microcontroller 12. Dynamic characteristics 12.1 Flash memory [1] Number of program/erase cycles. [2] Programming times are given for writing 64 bytes to the flash. Tamb <= +85 C. Flash programming with IAP calls (see LPC800 user manual). 12.2 External clock for the oscillator in slave mode and CLKIN Remark: The input voltage on the XTAL1/2 pins must be 1.95 V (see Table 9). For connecting the oscillator to the XTAL pins, also see Section 14.1. [1] Parameters are valid over operating temperature range unless otherwise specified. [2] Typical ratings are not guaranteed. The values listed are for room temperature (25 C), nominal supply voltages. Table 11. Flash characteristics Tamb = 40 C to +105 C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as specified below. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles tret retention time powered 10 20 - years unpowered 20 40 - years ter erase time page or multiple consecutive pages, sector or multiple consecutive sectors 95 100 105 ms tprog programming time [2] 0.95 1 1.05 ms Table 12. Dynamic characteristic: external clock (XTALIN or CLKIN inputs) Tamb = 40 C to +105 C; VDD over specified ranges.[1] Symbol Parameter Conditions Min Typ[2] Max Unit fosc oscillator frequency 1 - 25 MHz Tcy(clk) clock cycle time 40 - 1000 ns tCHCX clock HIGH time Tcy(clk) 0.4 - - ns tCLCX clock LOW time Tcy(clk) 0.4 - - ns tCLCH clock rise time - - 5 ns tCHCL clock fall time - - 5 ns Fig 27. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV) |
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