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MMPF0100NPEP датащи(PDF) 13 Page - Freescale Semiconductor, Inc |
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MMPF0100NPEP датащи(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 137 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 13 PF0100 General Product Characteristics Electrical Characteristics 4.3.2 Current Consumption The current consumption of the individual blocks is described in detail throughout this specification. For convenience, a summary table follows for standard use cases. Table 7. Current Consumption Summary TA = -40 to 85 °C, VIN = 3.6 V, VDDIO = 1.7 to 3.6 V, LICELL = 1.8 to 3.3 V, VSNVS = 3.0 V, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VDDIO = 3.3 V, LICELL = 3.0 V, VSNVS = 3.0 V and 25 °C, unless otherwise noted. Mode PF0100 Conditions System Conditions Typical MAX Unit Coin Cell (15),(16) VSNVS from LICELL All other blocks off VIN = 0.0 V VSNVSVOLT[2:0] = 110 No load on VSNVS 4.0 7.0 A Off (15)(17) VSNVS from VIN or LICELL Wake-up from PWRON active 32 k RC on All other blocks off VIN UVDET No load on VSNVS, PMIC able to wake-up 16 21 A Sleep (18) VSNVS from VIN Wake-up from PWRON active Trimmed reference active SW3A/B PFM Trimmed 16 MHz RC off 32 k RC on VREFDDR disabled No load on VSNVS. DDR memories in self refresh 122 220 A Standby (18) VSNVS from either VIN or LICELL SW1A/B combined in PFM SW1C in PFM SW2 in PFM SW3A/B combined in PFM SW4 in PFM SWBST off Trimmed 16 MHz RC enabled Trimmed reference active VGEN1-6 enabled VREFDDR enabled No load on VSNVS. Processor enabled in low power mode. All rails powered on except boost (load = 0 mA) 297 297 450 (19) 1000 (20) A Notes 15. At 25 °C only. 16. Refer to Figure 4 for Coin Cell mode characteristics over temperature. 17. When VIN is below the UVDET threshold, in the range of 1.8 V VIN < 2.65 V, the quiescent current increases by 50 A, typically. 18. For PFM operation, headroom should be 300 mV or greater. 19. From 0 °C to 85 °C 20. From -40 °C to 85 °C |
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