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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ADP3801 датащи(PDF) 2 Page - Analog Devices |
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ADP3801 датащи(HTML) 2 Page - Analog Devices |
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2 / 20 page  –2– REV. 0 ADP3801/ADP3802–SPECIFICATIONS Parameter Conditions Symbol Min Typ Max Units FINAL BATTERY VOLTAGE One Li-Ion Cell PROG = VT1, ADJ = VL, TA = +25°CVBAT 4.180 4.200 4.220 V PROG = VT1, ADJ = VL, –10°C ≤ TA ≤ +70°CVBAT 4.168 4.232 V PROG = VT1, ADJ = VL, –40°C ≤ TA ≤ +85°CVBAT 4.150 4.250 V Two Li-Ion Cells 1 PROG = VT2, ADJ = VL, TA = +25°CVBAT 8.366 8.400 8.434 V PROG = VT2, ADJ = VL, –10°C ≤ TA ≤ +70°CVBAT 8.337 8.463 V PROG = VT2, ADJ = VL, –40°C ≤ TA ≤ +85°CVBAT 8.300 8.500 V Three Li-Ion Cells 1 PROG = VT3, ADJ = VL, TA = +25°CVBAT 12.550 12.600 12.650 V PROG = VT3, ADJ = VL, –10°C ≤ TA ≤ +70°CVBAT 12.505 12.695 V PROG = VT3, ADJ = VL, –40°C ≤ TA ≤ +85°CVBAT 12.450 12.750 V BATTERY PROGRAMMING INPUT (PROG) One Li-Ion Cell (4.2 V) VT1 0.00 0.20 V Two Li-Ion Cells (8.4 V) VT2 1.00 1.20 V Three Li-Ion Cells (12.6 V) VT3 2.05 2.30 V Fail Safe Voltage (4.2 V) Defaults to 1 Li-Ion Cell 3.10 3.30 V PROG Input Current IB 1.5 5 µA A/B SELECT MUX Select Battery BATB VIH 2.0 V Select Battery BATA VIL 0.8 V A/B Input Current IIN 0.02 1 µA BATA or BATB Input Resistance Channel Selected RIN 185 265 k Ω BATA or BATB Input Current Channel Not Selected IBA, IBB 0.2 1 µA BATA or BATB Shutdown Current Part in Shutdown IBA, IBB 0.2 1 µA BATTERY ADJUST INPUT 2 (ADJ) % of Final Battery Voltage ADJ = 1.0 V, –10 °C ≤ T A ≤ +70°C 899091 % % of Final Battery Voltage ADJ = 2.3 V, –10 °C ≤ T A ≤ +70°C 109 110 111 % ADJ Disable Voltage Threshold 0% Change 2.475 2.6 V ADJ Bias Current 1.0 V ≤ ADJ ≤ 2.3 V IB 10 100 nA OVERVOLTAGE COMPARATOR Trip Point Percent Above VBAT 8% Response Time DRV Goes High tr 2 µs OSCILLATOR 200 kHz Option (ADP3801) fOSC 150 200 250 kHz 500 kHz Option (ADP3802) fOSC 375 500 625 kHz 0% Duty Cycle Threshold @ COMP Pin 1.0 V 100% Duty Cycle Threshold @ COMP Pin 2.0 V GATE DRIVE Rise Time CL = 1 nF, VCC – 4 V to 90% tr 35 ns Fall Time CL = 1 nF, 90% to VCC – 4 V tf 75 ns Output High Saturation Voltage VCC – VDRV VOH 275 mV Output Low Voltage VCC = 8 V VOL 1.0 2.0 V VCC > 8 V VOL VCC – 7 VCC – 6 V CURRENT SENSE AMPLIFIER Input Common-mode Range VCS+ and VCS– VCSCM 0.0 VCC – 2 V Input Differential Mode Range VCS 3 VCSDM 0.0 185 mV Input Offset Voltage 4 0.0 V ≤ V CSCM ≤ VCC – 2 V VCSVOS 1mV Input Bias Current 0.0 V ≤ V CSCM ≤ VCC – 2 V VCSIB 0.3 1 µA Input Offset Current 0.0 V ≤ V CSCM ≤ VCC – 2 V VCSIOS 0.01 0.15 µA Over Current Trip Point VCS 3 185 mV Response Time DRV Goes High tr 2 µs ISET INPUT Charge Current Programming Function 0.0 V ≤ V ISET ≤ 1.65 V VCS/VISET 3 0.1 V/V Programming Function Accuracy VISET = 1.65 V, –10 °C ≤ T A ≤ +70°C–5 ±1.0 +5 % VISET = 0.10 V, –10°C ≤ TA ≤ +70°C –25 ±10 +25 % ISET Bias Current 0.0 V ≤ V ISET ≤ 1.65 V IB 15 100 nA (@ –40 C ≤ T A ≤ +85 C, VCC = 10.0 V, unless otherwise noted) |
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