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S29AS016J датащи(PDF) 53 Page - SPANSION

номер детали S29AS016J
подробное описание детали  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory
PDF  60 Pages
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February 1, 2012 S29AS016J_00_11
S29AS016J
53
Data
She e t
18.6
Alternate CE# Controlled Erase/Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 54 for more information.
Figure 18.12 Alternate CE# Controlled Write Operation Timings
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Parameter
Speed Options
JEDEC
Std
Description
70
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
tSR/W
Latency Between Read and Write Operations
Min
20
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
6
µs
Word
Typ
6
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY



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