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S29AS016J датащи(PDF) 49 Page - SPANSION

номер детали S29AS016J
подробное описание детали  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory
PDF  60 Pages
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February 1, 2012 S29AS016J_00_11
S29AS016J
49
Data
She e t
18.4
Erase/Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 54 for more information.
Figure 18.5 Program Operation Timings
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Parameter
Speed Options
JEDEC
Std
Description
70
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
0
tWLAX
tAH
Address Hold Time
45
tDVWH
tDS
Data Setup Time
35
tWHDX
tDH
Data Hold Time
0
tOES
Output Enable Setup Time
0
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
0
tELWL
tCS
CE# Setup Time
0
tWHEH
tCH
CE# Hold Time
0
tWLWH
tWP
Write Pulse Width
35
tWHWL
tWPH
Write Pulse Width High
20
tSR/W
Latency Between Read and Write Operations
Min
20
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
6
µs
Word
6
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
0.5
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC
tAS
tWPH
tVCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
tCS
Status
DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
tBUSY
tCH
PA



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