S29AS016J datasheet(39/60 Pages) SPANSION

номер детали	S29AS016J

подробное описание детали	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory

PDF	60 Pages

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39 / 60 page

February 1, 2012 S29AS016J_00_11

S29AS016J

Data

She e t

Figure 12.1 Data# Polling Algorithm

Notes

1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for

erasure. During chip erase, a valid address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.

12.2

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a

pull-up resistor to VCC.

If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

Table 12.1 on page 42 shows the outputs for RY/BY#. Figures Figure 18.1 on page 46, Figure 18.2

on page 47, Figure 18.5 on page 49 and Figure 18.6 on page 50 shows RY/BY# for read, reset, program,

and erase operations, respectively.

DQ7 = Data?

Yes

DQ5 = 1?

Yes

FAIL

PASS

Read DQ7–DQ0

Addr = VA

Read DQ7–DQ0

Addr = VA

DQ7 = Data?

START

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