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CMS16 датащи(PDF) 1 Page - Toshiba Semiconductor |
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CMS16 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() CMS16 2010-08-09 1 TOSHIBA Schottky Barrier Diode CMS16 Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications • Forward voltage: VFM = 0.55 V (max) (@IFM = 3.0 A) • Average forward current: IF (AV) = 3.0 A • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to a small surface-mount package: “M−FLATTM” (Toshiba package name)” Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward current IF (AV) 3.0 (Note 1) A Nonrepetitive peak surge current IFSM 30 (50 Hz) A Junction temperature Tj −40 to 150 °C Storage temperature range Tstg −40 to 150 °C Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tℓ = 106°C Device mounted on a ceramic board Board size: 50 mm × 50 mm Soldering size: 2 mm × 2 mm Board thickness: 0.64 mm Rectangular waveform ( α = 180°), VR = 20 V Unit: mm ① ANODE ② CATHODE 0.16 1.75 ± 0.1 + 0.2 − 0.1 2.4 ① ② JEDEC ⎯ JEITA ⎯ TOSHIBA 3-4E1A Weight: 0.023 g (typ.) |
Аналогичный номер детали - CMS16 |
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Аналогичное описание - CMS16 |
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