Data Sheet

16 Megabit FlashBank Memory

SST38VF166

17

©2001 Silicon Storage Technology, Inc.

327-3 2/01

S71065

AC CHARACTERISTICS

Symbol

Parameter

SST38VF166-70

Units

Min

Max

Read Cycle Time

70

ns

Bank Enable Access Time

70

ns

Address Access Time

70

ns

Output Enable Access Time

30

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

0

ns

OE# Low to Active Output

0

ns

CE# High to High-Z Output

20

ns

OE# High to High-Z Output

20

ns

Output Hold from Address Change

0

ns

T21.1 327

Symbol

Parameter

Min

Max

Units

Word-Write Cycle (Erase and Program)

12.5

ms

40

µs

Word-Program Time - Flash Bank

20

µs

Sector-Erase Time - Flash Bank

25

ms

Block-Erase Time - Flash Bank

25

ms

Bank-Erase Time - Flash Bank

100

ms

12.5

ms

100

ms

Address Setup Time

0

ns

Address Hold Time

40

ns

BE# Setup Time

0

ns

BE# Hold Time

0

ns

OE# High Setup Time

0

ns

OE# High Hold Time

0

ns

Write Pulse Low Width

40

ns

Write Pulse High Time

30

ns

Data Setup Time

40

ns

Data Hold Time

0

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

0.1

50

ms

Time to DATA# Polling Read

35

ns

Time to Toggle Bit Read

35

ns

Time to ID or CFI Read/Exit Cycle

150

ns

Bank Enable Setup Time for Concurrent Operation

0

ns

T22.0 327