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SST38VF166 датащи(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST38VF166 датащи(HTML) 9 Page - Silicon Storage Technology, Inc |
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9 / 50 page ![]() Data Sheet 16 Megabit FlashBank Memory SST38VF166 9 ©2001 Silicon Storage Technology, Inc. 327-3 2/01 S71065 TABLE 4: OPERATION MODES SELECTION FOR FLASH BANK Array Operation Mode BE#1 BE#2 BE#3 OE# WE# DQ Address Read Flash Bank 1 VIL VIH VIH VIL VIH DOUT AIN Flash Bank 2 VIH VIL VIH VIL VIH DOUT AIN Block-Erase Flash Bank 1 VIL VIH VIH VIH VIL DIN See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIH VIL DIN See Tables 6 and 7 Sector-Erase Flash Bank 1 VIL VIH VIH VIH VIL DIN See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIH VIL DIN See Tables 6 and 7 Program Flash Bank 1 VIL VIH VIH VIH VIL DIN See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIH VIL DIN See Tables 6 and 7 Standby VIH VIH VIH X X High Z X Write Inhibit Flash Bank 1 VIH XX VIL VIH XX Flash Bank 2 X VIH XVIL VIH XX Flash Bank-Erase Flash Bank 1 VIL VIH VIH VIH VIL DIN See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIH VIL DIN See Tables 6 and 7 Status Operation Mode BE#1 BE#2 BE#3 OE# WE# DQ Address Write Status Read VIH VIH VIL VIL VIH DOUT1 5XXXXH Illegal State VIL VIL VIL X X High Z X2 Illegal State VIL VIL X X X High Z X2 Illegal State VIL XVIL X X High Z X2 Illegal State X VIL VIL X X High Z X2 Product Identification Flash Bank 1 VIL VIH VIH VIL VIH DOUT See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIL VIH DOUT See Tables 6 and 7 Common Flash Interface Flash Bank 1 VIL VIH VIH VIL VIH DOUT See Tables 6 and 7 Flash Bank 2 VIH VIL VIH VIL VIH DOUT See Tables 6 and 7 T4.5 327 1. If Flash Bank 1 is writing, DQ1 is low. If Flash Bank 2 is writing, DQ2 is low. If E2 Bank is writing, DQ3 is low. 2. Entering an illegal state during an Erase, Program, or Write operation will not affect the operation, i.e., the erase, program, or write will continue to normal completion. |
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