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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SST38VF166 датащи(PDF) 13 Page - Silicon Storage Technology, Inc |
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SST38VF166 датащи(HTML) 13 Page - Silicon Storage Technology, Inc |
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13 / 50 page  Data Sheet 16 Megabit FlashBank Memory SST38VF166 13 ©2001 Silicon Storage Technology, Inc. 327-3 2/01 S71065 TABLE 11: CFI QUERY IDENTIFICATION STRING FOR FLASH BANK 2 Address Data Data 10H 0051H Query Unique ASCII string “QRY” 11H 0052H 12H 0059H 13H 0001H Primary OEM command set (JEP-137) 14H 0008H 15H 0000H Address for Primary Extended Table (00H = none exists) 16H 0000H 17H 0000H Alternate OEM command set (00H = none exists) 18H 0000H 19H 0000H Address for Alternate OEM extended Table (00H = none exits) 1AH 0000H T11.2 327 TABLE 12: SYSTEM INTERFACE INFORMATION FOR FLASH BANK 2 Address Data Data 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min. (00H = no VPP pin) 1EH 0000H VPP max. (00H = no VPP pin) 1FH 0004H Typical time out for Word-Program 2N µs 20H 0000H Typical time out for min. size Page-Write 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector-Erase 2N ms 22H 0006H Typical time out for Bank-Erase 2N ms 23H 0001H Maximum time out for Word-Program 2N times typical 24H 0000H Maximum time out for Page-Write 2N times typical (00H = not supported) 25H 0001H Maximum time out for individual Sector-Erase 2N times typical 26H 0001H Maximum time out for Chip-Erase 2N times typical T12.8 327 TABLE 13: DEVICE GEOMETRY INFORMATION FOR FLASH BANK 2 Address Data Data 27H 0014H Bank size = 2N Byte (14H > 220 = 1 MByte = 8 Mbits) 28H 0001H Flash Bank Device Interface description (Refer to CFI JESD-68) (x16 asynchronous) 29H 0000H 2AH 0000H Maximum number of bytes in Page-Write = 2N (00H = not supported) 2BH 0000H 2CH 0002H Number of Erase Block Regions within device 2DH 00FFH Erase Block Region 1 Information (Sector) 2EH 0001H (Refer to the CFI specification or JESD-68) 2FH 0008H y = 511 + 1 = 512 sectors (01FFH = 511) 30H 0000H z = 2 KBytes/sector = 8 x 256 Bytes 31H 000FH Erase Block Region 2 Information (Block) 32H 0000H (Refer to the CFI specification or JESD-68) 33H 0000H y = 15 + 1 = 16 blocks 34H 0001H z = 64 KBytes/block = 256 x 256 Bytes (0100H = 64K) T13.5 327 |
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