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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SST38VF166 датащи(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST38VF166 датащи(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 50 page  ©2001 Silicon Storage Technology, Inc. 327-3 2/01 S71065 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashBank is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet 16 Megabit FlashBank Memory SST38VF166 FEATURES: • Single 2.7-3.6V Read and Write Operations • Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability • Superior Reliability – Endurance: E2 bank - 500,000 Cycles (typical) Flash bank - 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current, Read: 15 mA (typical) – Active Current, Concurrent Read while Write: 40 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode Current: 3 µA (typical) • Fast Write Operation – Flash Bank-Erase + Program: 8 sec (typical) – Flash Block-Erase + Program: 500 ms (typical) – Flash Sector-Erase + Program: 30 ms (typical) – E2 bank Word-Write: 9 ms (typical) • Fixed Erase, Program, Write Times – Remain constant after cycling • Read Access Time – 70 ns • Latched Address and Data • End-of-Write Detection – Toggle Bit – Data# Polling • E2 Bank: – Word-Write (Auto Erase before Program) – Sector-Erase (32 Words) + Word-Program (same as Flash bank) • Flash Bank: Two Small Erase Element Sizes – 1 KWords per Sector or 32 KWords per Block – Erase either element before Word-Program • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 48-Pin TSOP (12mm x 20mm) • Continuous Hardware and Software Data Protection (SDP) • A One Time Programmable (OTP) E2 Sector PRODUCT DESCRIPTION The SST38VF166 consists of three memory banks, 2 each 512K x16 bits sector mode flash EEPROM plus a 4K x16 bits word alterable E2PROM manufactured with SST’s pro- prietary, high performance SuperFlash Technology. The SST38VF166 erases and programs with a single power supply. The internal Erase/Program in the E2 bank is trans- parent to the user. The device conforms to (proposed) JEDEC standard pinouts for word-wide memories. The SST38VF166 device is divided into three separate memory banks, 2 each 512K x16 Flash banks and a 4K x16 E2 bank. Each Flash bank is typically used for program code storage and contains 512 sectors, each of 1 KWords or 16 blocks, each of 32 KWords. The Flash banks may also be used to store data. The E2 bank is typically used for data or configuration storage and contains 128 sectors, each of 32 words. Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank Enable (BE#) lines. The SST38VF166 inherently uses less energy during Erase, Program, and Write than alternative flash technolo- gies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase, Program, or Write operation is less than alternative flash technologies. The Auto Low Power mode automatically reduces the active read current to approximately the same as standby; thus, providing an average read current of approximately 1 mA/MHz of Read cycle time. The SuperFlash technology provides fixed Erase, Program, and Write times, independent of the number of Erase/Pro- gram cycles that have occurred. Therefore the system soft- ware or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. Device Operation The SST38VF166 operates as two independent 8-Megabit Word-Program, Sector-Erase flash EEPROMs with the additional functionality of a 64 Kbit word-alterable E2PROM. All banks are superimposed in the same mem- ory address space. All three memory banks share com- mon address lines, I/O lines, WE#, and OE#. Memory bank selection is by bank enable. BE#1 selects the first SST38VF16616Mb (x16) FlashBank + 64Kb E2 |
Аналогичный номер детали - SST38VF166 |
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Аналогичное описание - SST38VF166 |
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