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LTC3104 датащи(PDF) 17 Page - Linear Technology |
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LTC3104 датащи(HTML) 17 Page - Linear Technology |
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17 / 26 page ![]() LTC3630 17 3630fb APPLICATIONS INFORMATION Higher Current Applications For applications that require more than 500mA, the LTC3630 provides a feedback comparator output pin (FBO) for driving additional LTC3630s. When the FBO pin of a “master” LTC3630 is connected to the VFB pin of one or more “slave” LTC3630s, the master controls the burst cycle of the slaves. Figure 10 shows an example of a 5V, 1A regulator using two LTC3630s. The master is configured for a 5V fixed output with external soft-start and the VIN UVLO level is set by the RUN pin. Since the slaves are directly controlled by the master, the SS pin of the slave should have minimal capacitance and the RUN pin of the slave should be floating. Furthermore, slaves should be configured for a 1.8V fixed output (VPRG1 = VPRG2 = SS) to set the VFB pin threshold at 1.8V. The inductors L1 and L2 do not necessarily have to be the same, but should both meet the criteria described above in the Inductor Selection section. Efficiency Considerations The efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Efficiency can be expressed as: Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percent- age of input power. Although all dissipative elements in the circuit produce losses, two main sources usually account for most of the losses: VIN operating current and I2R losses. The VIN operating current dominates the efficiency loss at very low load currents whereas the I2R loss dominates the efficiency loss at medium to high load currents. 1. The VIN operating current comprises two components: The DC supply current as given in the electrical charac- teristics and the internal MOSFET gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each time the gate is switched from high to low to high again, a packet of charge, ΔQ, moves from VIN to ground. The resulting ΔQ/dt is the current out of VIN that is typically larger than the DC bias current. 2. I2R losses are calculated from the resistances of the internal switches, RSW and external inductor RL. When switching, the average output current flowing through the inductor is “chopped” between the high side PMOS switch and the low side NMOS switch. Thus, the series resistance looking back into the switch pin is a function of the top and bottom switch RDS(ON) values and the duty cycle (DC = VOUT/VIN) as follows: RSW = (RDS(ON)TOP)DC + (RDS(ON)BOT) • (1 – DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteris- tics curves. Thus, to obtain the I2R losses, simply add VFB SW L1 L2 VIN RUN R3 CIN COUT VOUT 5V 1A CSS VIN R4 SS VPRG1 VPRG2 FBO LTC3630 (MASTER) SW VFB VIN RUN SS VPRG1 VPRG2 FBO 3630 F10 LTC3630 (SLAVE) ISET ISET Figure 10. 5V, 1A Regulator |
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