SC5010

3

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specified in the Electrical Characteristics section is not recommended.

NOTES:

(1)

Tested according to JEDEC standard JESD22-A114-B.

(2)

Calculated from package in still air, mounted to 3 x 4.5 (in.), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Absolute Maximum Ratings

VCC Pin (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0

VIN, DRVP, IO1 to IO8(V) . . . . . . . . . . . . . . . . . . . . -0.3 to +30

DRVN, OVP, CS, EN, UVLO, SCP, BG, FLT (V) . . . -0.3 to +6.0

FSET, CPLL, SYNC, SCL, SDA, ISET, PWMI (V). . -0.3 to +6.0

PGND TO AGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3

Recommended Operating Conditions

Ambient Temperature Range (°C). . . . . . . . -40 < T

A

< +85

VIN (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 to 27

IO1 to IO8 Current per String (mA) . . . . . . . . . . . up to 30

Thermal Information

Maximum Junction Temperature (°C) . . . . . . . . . . . . . . +150

Storage Temperature Range (°C). . . . . . . . . . . . -65 to +150

Peak IR Reflow Temperature (10s to 30s) (°C) . . . . . . +260

Unless noted otherwise, T

A

= 25°C for typical, -40°C < T

A

= T

J

< 85°C for min and max. V

CC

= 5V, R

ISET

= 64.9 kΩ, R

FSET

= 100 kΩ , V

IN

= 12V.

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Input Supply

V

CC

Supply Voltage

V

CC

4.5

5.5

V

V

CC

Under-Voltage Lockout Threshold

V

CC-UVLO(TH)

V

CC

Voltage Rising

4.0

4.2

4.4

V

V

CC

Under-Voltage Lockout Hysteresis

V

CC-UVLO(HYS)

V

CC

Voltage Falling

180

mV

V

CC

Quiescent Supply Current

I

CC(Q)

EN = 5V, Switching, No Load

2

mA

V

CC

Supply Current in Shutdown

I

CC(SD)

EN = 0V

1

μA

V

IN

Supply Current in Shutdown

I

VIN(SD)

EN = 0V, VIN = 27V

1

μA

V

UVLO

Under-Voltage Lockout Threshold

V

UVLO(TH)

UVLO Pin Voltage Rising

1.18

1.23

1.28

V

I

UVLO

Under-Voltage Lockout Hysteresis

I

UVLO(HYS)

UVLO Pin Voltage Falling

7

10

13

μA

V

BG

Bandgap Voltage

V

BG

1.20

1.23

1.26

V

External FET Gate Drive

DRVN High Level

V

DRVN(H)

100mA from DRVN to GND

V

CC

-0.5 V

CC

-0.2

V

DRVN Low Level

V

DRVN(L)

-100mA from DRVN to V

CC

0.2

0.5

V

DRVN On-Resistance

R

DRVN

DRVN high or Low

2

5



DRVN Sink / Source Current

I

DRVN

DRVN forced to 2.5V

1

A

Electrical Characteristics