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MPC5125 датащи(PDF) 41 Page - Freescale Semiconductor, Inc

номер детали MPC5125
подробное описание детали  MPC5125 Microcontroller
PDF  94 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC5125 датащи(HTML) 41 Page - Freescale Semiconductor, Inc

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Electrical and Thermal Characteristics
MPC5125 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
41
1
4.1.4
Electrostatic Discharge
CAUTION
This device contains circuitry that protects against damage due to high-static voltage or
electrical fields. However, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages. Operational
reliability is enhanced if unused inputs are tied to an appropriate logic voltage level (GND
or VDD). Table 11 gives package thermal characteristics for this device.
Table 7. General I/O Pads1 — Drive Current, Slew Rate
NOTES:
1 General I/O—rise and fall times at drive load 50 pF.
Pad Type
Supply Voltage
Drive Select/Slew
Rate Control
Rise time
max (ns)
Fall time
max (ns)
Current
Ioh (mA)
Current
Iol (mA)
SpecID
General IO
VDD_IO = 3.3 V
Configuration 3 (11)
1.4
1.6
35
35
D3.41
Configuration 2 (10)
9.8
12
D3.42
Configuration 1 (01)
19
24
D3.43
Configuration 0 (00)
140
183
D3.44
Table 8. DDR I/O Pads1 — Drive Current, Slew Rate
NOTES:
1 DDR—rise and fall times at 50
 transmission line impedance terminated to MV
TT (0.5 VDD_IO_MEM) + 4 pF load.
Pad Type
Supply Voltage
Drive Select/
Slew Rate Control
Rising slew
max (ns)2
2 Rising slew rate measured between 0.5 × V
DD_IO_MEM – 450 mV and 0.5 × VDD_IO_MEM + 50 mV for all modes.
Falling slew
max (ns)3
3 Falling slew rate measured between 0.5 × V
DD_IO_MEM + 50 mV and 0.5 × VDD_IO_MEM – 450 mV for all modes.
Current
Ioh (mA)
Current
Iol (mA)
SpecID
DDR
VDD_IO_MEM = 2.5 V (DDR) Configuration 3 (011)
0.45
0.45
16.2
16.2
D3.45
VDD_IO_MEM = 1.8 V (LPDDR
and SDR)
Configuration 0 (000)
0.8
0.8
4.6
4.6
D3.46
Configuration 1 (001)
8.1
8.1
D3.47
VDD_IO_MEM = 1.8 V (DDR2) Configuration 2 (010)
0.7
0.7
5.3
5.3
D3.48
Configuration 6 (110)
13.4
13.4
D3.49
VDD_IO_MEM = 3.3 V (SDR) Configuration 7 (111)
0.45
0.45
8
8
D3.50
Table 9. ESD and Latch-Up Protection Characteristics
Sym
Rating
Min
Max
Unit
SpecID
VHBM
Human body model (HBM) — JEDEC JESD22-A114-B
2000
V
D4.1
VMM
Machine model (MM) — JEDEC JESD22-A115
200
V
D4.2
VCDM
Charge device model (CDM) — JEDEC JESD22-C101
250
V
D4.3



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