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33781 датащи(PDF) 9 Page - Freescale Semiconductor, Inc |
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33781 датащи(HTML) 9 Page - Freescale Semiconductor, Inc |
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9 / 44 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 9 33781 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 4.75V ≤ VCC ≤ 5.25V, 9.0V ≤ VSUPn ≤ 25V,-40°C ≤ TA ≤ 90°C, unless otherwise noted. Voltages relative to GND, unless otherwise noted. Typical values noted reflect the approximate mean values of the parameter at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit CLOCK CLK Periods (System requirement)(10) Time High Time Low Period tCLKHI tCLKLO tCLKPER 75 75 245 – – 250 – – 255 ns CLK Transition (System requirement)(10) Time for Low-to-High Transition of the CLK Input Signal Time for High-to-Low Transition of the CLK Input Signal tCLKLH tCLKHL – – – – 100 100 ns Reset Low Time tRSTLO 100 – – ns SPI INTERFACE TIMING SPI Clock Cycle Time tCYC 100 – – ns SPI Clock High Time tHI 40 – – ns SPI Clock Low Time tLO 40 – – ns SPI CSn Lead Time(11) tLEAD 50 – – ns SPI CSn Lag Time(11) tLAG 50 – – ns SPI CS0 Time Between Bursts(10) tCS0HI 80 – – ns SPI CS1 Time Between Bursts(10) tCS1HI 300 – – ns Data Setup Time MOSI0 Valid Before SCLK0 Rising Edge(11) tSU 10 – – ns Data Hold Time MOSI0 Valid After SCLK0 Rising Edge(11),(10) tH 10 – – ns Data Valid Time SCLKn Falling Edge to MISOn Valid, C = 50pF(12) tV – – 25 ns Output Disable Time CSn Rise to MISOn Hi-Z tDIS – – 50 ns Rise Time (30% VCC to 70% VCC) (10) SCLKn, MOSI0 tR – – 10 ns Fall Time (70% VCC to 30% VCC)(10) SCLKn, MOSI0 tF – – 10 ns Notes 10. Not measured in production. 11. SPI signal timing from the production test equipment is programmed to ensure compliance. 12. Conditions are verified indirectly during test. |
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