ATmega169P datasheet(311/393 Pages) ATMEL

311 / 393 page

311

8018N–AVR–08/09

ATmega169P

applied for a given address. The Program Memory Page is stored by loading the Write

Program Memory Page instruction with the 7 MSB of the address. If polling (RDY/BSY) is

not used, the user must wait at least t

WD_FLASH before issuing the next page. (See Table

27-15.) Accessing the serial programming interface before the Flash write operation

completes can result in incorrect programming.

A: The EEPROM array is programmed one byte at a time by supplying the address and

data together with the appropriate Write instruction. An EEPROM memory location is first

automatically erased before new data is written. If polling (RDY/BSY) is not used, the

user must wait at least t

WD_EEPROM before issuing the next byte (See Table 27-15). In a

chip erased device, no 0xFFs in the data file(s) need to be programmed.

B: The EEPROM array is programmed one page at a time. The Memory page is loaded

one byte at a time by supplying the 2 LSB of the address and data together with the Load

EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading

the Write EEPROM Memory Page Instruction with the 4 MSB of the address. When using

EEPROM page access only byte locations loaded with the Load EEPROM Memory Page

instruction is altered. The remaining locations remain unchanged. If polling (RDY/BSY) is

not used, the user must wait at least t

WD_EEPROM before issuing the next page (See Table

27-15). In a chip erased device, no 0xFF in the data file(s) need to be programmed.

Any memory location can be verified by using the Read instruction which returns the con-

tent at the selected address at serial output MISO.

At the end of the programming session, RESET can be set high to commence normal

operation.

Power-off sequence (if needed):

Set RESET to “1”.

Turn V

CC power off

Figure 27-11. Serial Programming Waveforms

Table 27-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

Symbol

Minimum Wait Delay

WD_FUSE

4.5 ms

WD_FLASH

4.5 ms

tWD_EEPROM

9.0 ms

WD_ERASE

9.0 ms

MSB

LSB

SERIAL CLOCK INPUT

(SCK)

SERIAL DATA INPUT

(MOSI)

(MISO)

SAMPLE

SERIAL DATA OUTPUT

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