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STM32F101C6U6ATR датащи(PDF) 47 Page - STMicroelectronics

номер детали STM32F101C6U6ATR
подробное описание детали  Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
PDF  73 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F101C6U6ATR датащи(HTML) 47 Page - STMicroelectronics

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STM32F101x4, STM32F101x6
Electrical characteristics
Doc ID 15058 Rev 3
47/74
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 28.
Flash memory endurance and data retention
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA–40 to +85 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA –40 to +85 °C
20
40
ms
tME
Mass erase time
TA –40 to +85 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 36 MHz with 1 wait
state, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 36 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
TA = –40 °C to 85 °C
10
kcycles
tRET
Data retention
TA = 85 °C, 1 kcycle
(2)
2.
Cycling performed over the whole temperature range.
30
Years
TA = 55 °C, 10 kcycle
(2)
20



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