16 Me

16 Me

16 Me

16 Me

16 Meg FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

g FPM DRAM

AS4C4M4

AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.

1

AS4C4M4

Rev. 1.1 06/05

Austin Semiconductor, Inc.

4M x 4 CMOS DRAM

WITH FAST PAGE MODE, 5 VOLT

AVAILABLE AS MILITARY

SPECIFICATIONS

• MIL-STD-883

FEATURES

• Fast Page Mode Operation

• CAS\-before-RAS\ Refresh Capability

• RAS\-only and Hidden Refresh Capability

• Self-refresh Capability

• Fast Parallel Test Mode Capability

• TTL Compatible Inputs and Outputs

• Early Write or Output Enable Controlled Write

• JEDEC Standard Pinout

• Single +5V (±10%) Power Supply

OPTIONS

MARKINGS

• Timing

60ns access

-6

70ns access

-7

•

Package

Plastic TSOP, 24-pin

DG

XT

IT

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS4C4M4DG is a

4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering

high speed random access of memory cells within the same

row. This device features a +5V (±10%) power supply,

refresh cycle (2K), and fast access times (60 and 70ns). Other

features include CAS\-before-RAS\, RAS\-only refresh, and

Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM

is fabricated using an advanced CMOS process to realize high

bandwidth, low power consumption and high reliability. It may

be used as main memory for high level computers,

microcomputers and personal computers.

PIN ASSIGNMENT

(Top View)

24 Pin TSOP (DG)

1

2

3

4

5

6

7

8

9

10

11

12

24

23

22

21

20

19

18

17

16

15

14

13

Vss

DQ3

DQ2

CAS\

OE\

A9

A8

A7

A6

A5

A4

Vss

Vcc

DQ0

DQ1

W\

RAS\

NC

A10

A0

A1

A2

A3

Vcc

PIN

FUNCTION

A0 - A10

Address Inputs

DQ0 -DQ3

Data In/Out

Ground

RAS\

Row Address Strobe

CAS\

Column Address Strobe

W\

Read/Write Input

OE\

Data Output Enable

Power (+5V)

NC

No Connect

PIN ASSIGNMENT

For more products and information

please visit our web site at

www.austinsemiconductor.com

PERFORMANCE RANGE

SPEED

UNITS

-6

60

15

110

40

ns

-7

70

18

130

45

ns