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AS4C4M4DG-7/XT датащи(PDF) 6 Page - Austin Semiconductor

номер детали AS4C4M4DG-7/XT
подробное описание детали  4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT
PDF  19 Pages
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производитель  AUSTIN [Austin Semiconductor]
домашняя страница  http://www.austinsemiconductor.com
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AS4C4M4DG-7/XT датащи(HTML) 6 Page - Austin Semiconductor

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16 Me
16 Me
16 Me
16 Me
16 Meg FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
g FPM DRAM
AS4C4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
6
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc.
TEST MODE CYCLE11
MIN
MAX
MIN
MAX
tRC
Random read or write cycle time
115
135
ns
tRWC
Read-modify-write cycle time
160
180
ns
tRAC
Access time from RAS\
65
70
ns
3, 4, 10, 12
tCAC
Access time from CAS\
20
22
ns
3, 4, 5, 12
tAA
Access time from column address
35
38
ns
3, 10 ,12
tRAS
RAS\ pulse width
65
10K
75
10K
ns
tCAS
CAS\ pulse width
20
10K
25
10K
ns
tRSH
RAS\ hold time
20
22
ns
tCSH
CAS\ hold time
65
70
ns
tRAL
Column address to RAS\ lead time
35
40
ns
tCWD
CAS\ to W\ delay time
45
48
ns
7
tRWD
RAS\ to W\ delay time
90
100
ns
7
tAWD
Column address to W\ delay time
60
70
ns
7
tCPWD
CAS\ precharge to W\ delay time
65
70
ns
tPC
Fast Page cycle time
45
50
ns
tPRWC
Fast Page read-modify-write time
90
100
ns
tRASP
RAS\ pulse width (Fast Page Cycle)
65
100K
75
100K
ns
tCPA
Access time from CAS\ precharge
40
45
ns
3
tOEA
OE\ access time
20
22
ns
tOED
OE\ to data delay
20
22
ns
tOEH
OE\ command hold time
20
22
ns
UNITS
NOTES
SYMBOL
PARAMETER
-60
-70
NOTES:
1. An initial pause of 200us is required after power-up followed by an 8 RAS\-only refresh or CAS\-before-RAS\ refresh cycles
before proper device operation is achieved.
2. V
IH(MIN) and VIL(MAX) are reference levels for measuring timing of input signals. Transition times are measured between
V
IH(MIN) and VIL(MAX) and are assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 2 TTL loads and 100pF.
4. Operation within the t
RCD(MAX) limit insures that tRAC(MAX) and be met. tRCD(MAX) is specified as a reference point only.
If t
RCD is greater than the specified tRCD(MAX) limit, then access time is controlled exclusively by tCAC.
5. Assumes that t
RCD > tRCD(MAX).
6. t
OFF(MIN) and tOEZ(MAX) define the time at which the output achieves the open circuit condition and are not referenced VOH
or V
OL.
7. t
WCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical character-
istics only. If t
WCS > tWCS(MIN), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If t
CWD > tCWD(MIN), tRWD > tRWD(MIN) and tAWD > tAWD(MIN), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
(Continued on page 7)



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