Description
The V53C316405A is a 4,194,304 x 4 bit high-performance CMOS dynamic random access memory. The V53C316405A offers Page mode operation with Extended Data Output. The V53C316405A has asymmetric address, 12-bit row and 10-bit column.
All inputs are TTL compatible. EDO Page Mode operation allows random access up to 1024 x 4 bits, within a page, with cycle times as short as 20ns.
These features make the V53C316405A ideally suited for a wide variety of high performance computer systems and peripheral applications.

Features
■ 4M x 4-bit organization
■ EDO Page Mode for a sustained data rate of 50 MHz
■ RAS access time: 50, 60 ns
■ Low power dissipation
■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh and Hidden Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 24/26-pin 300 mil SOJ, and 24/26-pin 300 mil TSOP-II
■ Single +3.3V ±0.3V Power Supply
■ TTL Interface