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TDF8599B датащи(PDF) 28 Page - NXP Semiconductors

номер детали TDF8599B
подробное описание детали  I2C-bus controlled dual channel 43 W/4 W, single channel 85 W/1 W class-D power amplifier with load diagnostics
PDF  54 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8599B датащи(HTML) 28 Page - NXP Semiconductors

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TDF8599B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 July 2009
28 of 54
NXP Semiconductors
TDF8599B
I2C-bus controlled dual channel class-D power amplifier
11. Thermal characteristics
12. Static characteristics
Table 18.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
35
K/W
Rth(j-c)
thermal resistance from junction
to case
1
K/W
Table 19.
Static characteristics
VP =VDDA = 14.4 V; fosc = 320 kHz; −40 °C < Tamb < +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply
VP
supply voltage
8
14.4
24
V
IP
supply current
off state; Tj ≤ 85 °C; VP = 14.4 V
-
2
10
µA
Iq(tot)
total quiescent current
Operating mode; no load,
snubbers and filter connected
-
90
120
mA
Series resistance output switches
RDSon
drain-source on-state
resistance
power switch;
Tj =25 °C
-
140
150
m
Ω
Tj = 100 °C
-
190
205
m
Ω
I2C-bus interface: pins SCL and SDA
VIL
LOW-level input voltage
0
-
1.5
V
VIH
HIGH-level input voltage
2.3
-
5.5
V
VOL
LOW-level output voltage
pin SDA; Iload = 5 mA
0
-
0.4
V
Address, phase shift and modulation mode select: pins ADS and MOD
Vi
input voltage
pins not connected
[1] 1.5
2
2.7
V
Ii
input current
pins shorted to GND
[1] 80
105
160
µA
Enable and SEL_MUTE input: pins EN and SEL_MUTE
Vi
input voltage
pin EN; off state
0
-
0.8
V
pin EN; Standby mode; I2C-bus
mode
2-
5V
pin EN; Mute mode or Operating
mode; non-I2C-bus mode
2-
5V
pin SEL_MUTE; Mute mode;
voltage on pin EN>2V
0
-
0.8
V
pin SEL_MUTE; Operating mode;
voltage on pin EN>2V
3-
5V
Ii
input current
pin EN; 2.5 V
-
-
5
µA
pin SEL_MUTE; Operating mode;
0.8 V
--50
µA



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