NTLJS1102P datasheet(4/7 Pages) ONSEMI

номер детали	NTLJS1102P

подробное описание детали	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package

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производитель	ONSEMI [ON Semiconductor]

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NTLJS1102P

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

4.5

3.5

3.0

2.5

2.0

1.0

0.5

2.25

1.75

1.5

1.0

0.75

0.5

0.25

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

ID, DRAIN CURRENT (A)

4.0

3.0

2.5

2.0

1.5

1.0

0.5

0.02

0.06

0.08

0.10

0.14

0.16

0.20

0.02

0.04

0.06

0.12

0.14

0.18

0.20

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

−25

−50

0.7

0.8

0.9

1.0

1.2

1.3

1.4

1.5

100

1,000

10,000

100,000

1.5

4.0

5.0

VGS = −1.2 V

−1.5 V

−1.8 V

−2.0 V

−2.5 V

−4.5 V

1.25

2.0

2.5

VDS = −5 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

3.5

4.5

0.04

0.12

0.18

TJ = 25°C

ID = −0.2 A

ID = −6.2 A

0.08

0.10

0.16

VGS = −4.5 V

−1.8 V

TJ = 25°C

−1.2 V

−1.5 V

−2.5 V

150

1.1

VGS = −4.5 V

ID = −6.2 A

TJ = 125°C

TJ = 150°C

TJ = 85°C

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