NTLJS1102P datasheet(1/7 Pages) ONSEMI

номер детали	NTLJS1102P

подробное описание детали	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package

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November, 2008 − Rev. 0

1

Publication Order Number:

NTLJS1102P/D

NTLJS1102P

Power MOSFET

−8 V, −8.1 A, mCOOL] Single P−Channel,

2x2 mm, WDFN package

Features

• WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

• Lowest RDS(on) in 2 x 2 mm Package

• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

Drive

• 2 x 2 mm Footprint Same as SC−88 Package

• Low Profile (<0.8 mm) for Easy Fit in Thin Environments

• This is a Halide−Free Device

• This is a Pb−Free Device

Applications

• High Side Load Switch

• Li Ion Battery Linear Mode Charging

• Optimized for Battery and Load Management Applications in

Portable Equipment

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−8

V

Gate−to−Source Voltage

VGS

± 6

V

Continuous

Drain Current

(Note 1)

Steady

State

TA = 25°C

ID

−6.2

A

TA = 85°C

−4.5

t v 5 s

TA = 25°C

−8.1

Power

Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.9

W

t v 5 s

3.3

Continuous

Drain Current

(Note 2)

Steady

State

TA = 25°C

ID

−3.7

A

TA = 85°C

−2.7

Power

Dissipation

(Note 2)

TA = 25°C

PD

0.7

W

Pulsed Drain Current

tp = 10 ms

IDM

−30

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to

150

°C

Source Current (Body Diode) (Note 2)

IS

−5.5

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 30 mm2 [2 oz] including traces).

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−8.0 V

45 mW @ −2.5 V

36 mW @ −4.5 V

RDS(on) MAX

−3.0 A

ID MAX

V(BR)DSS

68 mW @ −1.8 V

90 mW @ −1.5 V

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

G

S

P−CHANNEL MOSFET

D

J6 = Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

J6MG

G

1

2

3

6

5

4

WDFN6

CASE 506AP

MARKING

DIAGRAM

1

2

3

6

5

4

D

G

D

S

(Top View)

PIN CONNECTIONS

D

S

D

Pin 1

300 mW @ −1.2 V

−5.5 A

−6.2 A

−1.0 A

−0.2 A

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