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NTLJS1102P датащи(PDF) 5 Page - ON Semiconductor

номер детали NTLJS1102P
подробное описание детали  Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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NTLJS1102P датащи(HTML) 5 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
7
6
5
4
3
2
1
0
0
200
400
1000
1400
1600
2000
2400
14
12
10
8
6
4
2
0
0
1
2
3
4
5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
100
1000
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
TJ, TEMPERATURE (°C)
SINGLE PULSE TIME (s)
125
100
75
50
25
0
−25
−50
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
1E+00
1E−01
1E−02
1E−03
0
10
20
30
40
50
600
800
1200
1800
2200 Ciss
Coss
Crss
VGS = 0 V
TJ = 25°C
f = 1 MHz
16
QT
QGS
QGD
−VGS
−VDS
VDS = −4 V
ID = −6.2 A
TJ = 25°C
0
1
2
3
4
5
VGS = −4.5 V
VDD = −4 V
ID = −6.2 A
td(off)
td(on)
tf
tr
1.0
TJ = 25°C
TJ = 125°C
TJ = −55°C
TJ = 150°C
150
0.5
ID = −250 mA
1E+01
1E+02 1E+03
8



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