NTLJS1102P datasheet(2/7 Pages) ONSEMI

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NTLJS1102P

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 3)

RqJA

°C/W

Junction−to−Ambient – t v 5 s (Note 3)

RqJA

Junction−to−Ambient – Steady State min Pad (Note 4)

RqJA

180

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−8.0

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, Ref to 25°C

−7.2

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −8V

TJ = 25°C

−1.0

TJ = 85°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±6V

±0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.29

−0.72

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

2.7

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −6.2 A

VGS = −4.5 V, ID = −3.0 A

VGS = −2.5 V, ID = −5.5 A

VGS = −2.5 V, ID = −3.0 A

VGS = −1.8 V, ID = −3.0 A

VGS = −1.5 V, ID = −1.0 A

VGS = −1.2 V, ID = −0.2 A

300

Forward Transconductance

gFS

VDS = −4 V, ID = −6.2 A

14.3

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = −4 V

1585

Output Capacitance

COSS

350

Reverse Transfer Capacitance

CRSS

185

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = − 4 V;

ID = −6.2 A

15.7

Threshold Gate Charge

QG(TH)

0.8

Gate−to−Source Charge

QGS

1.9

Gate−to−Drain Charge

QGD

3.3

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time

tD(ON)

VGS = −4.5 V, VDS = −4 V,

ID = −6.2 A, RG = 1 W

8.0

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

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